2005. 10. 24 1/7 semiconductor technical data khb2d0n60p/f n channel mos field effect transistor revision no : 1 general description this planar stripe mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for electronic ballast and switching mode power supplies. features v dss = 600v, i d = 2.0a drain-source on resistance : r ds(on) =5.0 @v gs = 10v qg(typ.) = 12.5nc maximum rating (tc=25 ) * : drain current limited by maximum junction temperature. g d s characteristic symbol rating unit khb2d0n60p KHB2D0N60F drain-source voltage v dss 600 v gate-source voltage v gss 30 v drain current @t c =25 i d 2.0 2.0* a @t c =100 1.3 1.3* pulsed (note1) i dp 6.0 6.0* single pulsed avalanche energy (note 2) e as 120 mj repetitive avalanche energy (note 1) e ar 5.4 mj peak diode recovery dv/dt (note 3) dv/dt 5.5 v/ns drain power dissipation tc=25 p d 54 23 w derate above25 0.43 0.18 w/ maximum junction temperature t j 150 storage temperature range t stg -55 150 thermal characteristics thermal resistance, junction-to-case r thjc 2.32 5.5 /w thermal resistance, case-to-sink r thcs 0.5 - /w thermal resistance, junction-to- ambient r thja 62.5 62.5 /w dim millimeters to-220ab 1.46 a b c d e f g h j k m n o 0.8 0.1 + _ 2.8 0.1 + _ 2.54 0.2 + _ 1.27 0.1 + _ 1.4 0.1 + _ 13.08 0.3 + _ 3.6 0.2 + _ + _ 9.9 0.2 + _ 9.2 0.2 + _ 4.5 0.2 + _ 2.4 0.2 15.95 max 1.3+0.1/-0.05 0.5+0.1/-0.05 3.7 1.5 a f b j g k m l l e i i o c h nn q d q p p 1. gate 2. drain 3. source 123 dim millimeters to-220is a a b b c c d d e e f f g g h h 1.47 max 13.0 max j j k k l l m mm n n o o p q q 123 1. gate 2. drain 3. source 3.18 0.1 + _ 0.8 0.1 + _ 3.3 0.1 + _ 0.5 0.1 + _ 10.16 0.2 + _ 15.87 0.2 + _ 12.57 0.2 + _ 2.54 0.2 + _ 2.54 0.2 + _ 2.76 0.2 + _ 6.68 0.2 + _ 4.7 0.2 + _ 3.23 0.1 + _ 6.5 p
2005. 10. 24 2/7 khb2d0n60p/f revision no : 1 electrical characteristics (tc=25 ) characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 a, v gs =0v 600 - - v breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25 - 0.65 - v/ drain cut-off current i dss v ds =600v, v gs =0v, - - 10 a gate threshold voltage v th v ds =v gs , i d =250 a 2.0 - 4.0 v gate leakage current i gss v gs = 30v, v ds =0v - - 100 na drain-source on resistance r ds(on) v gs =10v, i d =1.0a - 3.8 5.0 dynamic total gate charge q g v ds =480v, i d =2.0a v gs =10v (note4,5) - 12.5 17 nc gate-source charge q gs - 2.2 - gate-drain charge q gd - 5.4 - turn-on delay time t d(on) v dd =300v r l =150 r g =25 (note4,5) - 16 40 ns turn-on rise time t r - 50 110 turn-off delay time t d(off) - 40 90 turn-off fall time t f - 40 90 input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz - 380 490 pf reverse transfer capacitance c rss - 7.6 9.9 output capacitance c oss - 35 46 source-drain diode ratings continuous source current i s v gs 2005. 10. 24 3/7 khb2d0n60p/f revision no : 1 gate - source voltage v gs (v) i d - v ds drain - source voltage v ds (v) drain current i d (a) 10 -1 10 0 10 1 10 -1 10 0 10 1 10 0 10 -1 68 410 2 i d - v gs r ds(on) - i d drain current i d (a) drain current i d (a) on - resistance r ds(on) ( ? ) i s - v sd 0.2 0.4 0.8 1.0 1.2 1.4 0.6 reverse drain current i s (a) 0 18 15 12 6 3 9 0246 135 v gs = 20v v gs = 10v source - drain voltage v sd (v) 25 c 150 c 150 c 25 c -55 c 10 0 10 -1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v 5.0 v normalized threshold voltage v th v th - t j r ds(on) - t j -100 -50 0.0 0.5 1.5 1.0 050 100 150 junction temperture t j ( ) 0 50 -100 -50 100 150 normalized on resistance junction temperature tj ( ) c 0.0 0.5 2.5 1.0 1.5 2.0 c v gs = 0v i ds = 250 v gs = 10v i ds = 2.0a
2005. 10. 24 4/7 khb2d0n60p/f revision no : 1 drain current i d (a) gate - charge q g (nc) c - v ds drain - source voltage v ds (v) drain - source voltage v ds (v) 0 12 10 6 2 4 8 4 14 12 10 2 8 6 0 q g - v gs safe operation area capacitance (pf) gate - source voltage v gs (v) 0 200 600 800 400 c oss c iss c rss frequency = 1mhz drain current i d (a) drain - source voltage v ds (v) safe operation area 10 0 10 1 10 -2 10 -1 10 1 10 -1 10 0 10 0 10 1 10 0 10 -2 10 -1 10 1 10 2 10 3 dc 100 s 10 s 1 s 100 s 0.0 2.0 1.2 0.4 0.8 1.6 75 150 125 50 100 25 drain current i d (a) v ds = 120v v ds = 300v v ds = 480v 10 1 10 0 10 2 10 3 c junction temperature t j ( ) i d - t j i d =2.0a t c = 25 t j = 150 single nonrepetitive pulse c c operation in this area is limited by r ds(on) operation in this area is limited by r ds(on) 100 s 10 s 1 s dc t c = 25 t j = 150 single nonrepetitive pulse c c (khb2d0n60p) (KHB2D0N60F)
2005. 10. 24 5/7 khb2d0n60p/f revision no : 1 square wave pulse duration (sec) 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 10 -2 10 -1 10 0 {khb2d0n60p} single pulse 0.0 2 0. 05 0 .1 0.2 0.01 - duty factor, d= t 1 /t 2 t j(max) - t c - r thjc = p d t 1 t 2 p dm square wave pulse duration (sec) 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 10 -2 10 -1 10 0 {KHB2D0N60F} single pul se 0.0 2 0.05 0. 1 0.2 0.01 - duty factor, d= t 1 /t 2 t j(max) - t c - r thjc = p d t 1 t 2 p dm r th normalized transient thermal resistance r th normalized transient thermal resistance duty=0.5 dut y=0 . 5
2005. 10. 24 6/7 khb2d0n60p/f revision no : 1 - gate charge i d i d v ds v gs v gs v ds v gs 1.0 ma 0.8 x v dss 0.5 x v dss fast recovery diode 10v 10 v 25 ? r l q g q gd q gs q t p - resistive load switching - single pulsed avalanche energy v ds (t) i d (t) v ds v gs 50v 10 v 25 ? l time e as = li as 2 bv dss - v dd bv dss 1 2 v dd i as bv dss v ds v gs t r t d(off) t off t d(on) t on t f 10% 90%
2005. 10. 24 7/7 khb2d0n60p/f revision no : 1 - source - drain diode reverse recovery and dv /dt i f i s v ds v sd 0.8 x v dss i sd (dut) v ds (dut) v gs 10v driver dut body diode recovery dv/dt body diode forword voltage drop body diode forword current body diode reverse current di/dt v dd i rm
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